Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate

Min Ho Kang; Ying Ying Zhang; Kee Young Park; Shi Guang Li; Soon Yen Jung; Ga Won Lee; Jin Suk Wang; Hi Deok Lee; Jung Woo Oh; Prashant Majhi; Raj Jammy; Kun Joo Park

doi:10.3938/jkps.55.221

Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate

Min Ho Kang, Ying Ying Zhang, Kee Young Park, Shi Guang Li, Soon Yen Jung, Ga Won Lee, Jin Suk Wang, Hi Deok Lee, Jung Woo Oh, Prashant Majhi, Raj Jammy, Kun Joo Park

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550 °C due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.

Original language	English
Pages (from-to)	221-226
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.221
Publication status	Published - 2009 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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Kang, M. H., Zhang, Y. Y., Park, K. Y., Li, S. G., Jung, S. Y., Lee, G. W., Wang, J. S., Lee, H. D., Oh, J. W., Majhi, P., Jammy, R., & Park, K. J. (2009). Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate. Journal of the Korean Physical Society, 55(1), 221-226. https://doi.org/10.3938/jkps.55.221

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title = "Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate",

abstract = "Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550 °C due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.",

author = "Kang, {Min Ho} and Zhang, {Ying Ying} and Park, {Kee Young} and Li, {Shi Guang} and Jung, {Soon Yen} and Lee, {Ga Won} and Wang, {Jin Suk} and Lee, {Hi Deok} and Oh, {Jung Woo} and Prashant Majhi and Raj Jammy and Park, {Kun Joo}",

year = "2009",

month = jul,

doi = "10.3938/jkps.55.221",

language = "English",

volume = "55",

pages = "221--226",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

Kang, MH, Zhang, YY, Park, KY, Li, SG, Jung, SY, Lee, GW, Wang, JS, Lee, HD, Oh, JW, Majhi, P, Jammy, R & Park, KJ 2009, 'Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate', Journal of the Korean Physical Society, vol. 55, no. 1, pp. 221-226. https://doi.org/10.3938/jkps.55.221

TY - JOUR

T1 - Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate

AU - Kang, Min Ho

AU - Zhang, Ying Ying

AU - Park, Kee Young

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Lee, Ga Won

AU - Wang, Jin Suk

AU - Lee, Hi Deok

AU - Oh, Jung Woo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Park, Kun Joo

PY - 2009/7

Y1 - 2009/7

N2 - Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550 °C due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.

AB - Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550 °C due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.

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DO - 10.3938/jkps.55.221

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SN - 0374-4884

VL - 55

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EP - 226

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate

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