Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H2O2 oxidant

Yue Wang, Minjae Kim, Akendra Singh Chabungbam, Dong eun Kim, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H2O2 to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H2O2 can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 1016 to 1.02 × 1012 cm−3, enhancing suitability for p-type ZnO fabrication. Nitrogen (H2O2 dosing directly after NH3·H2O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 1017 cm−3, and ZnO homogenous p-n junction prepared using this H2O2 dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H2O2 doping.

Original languageEnglish
Article number152170
JournalApplied Surface Science
Volume579
DOIs
Publication statusPublished - 2022 Mar 30

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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