Supercritical fluid deposition of SiO 2 thin films: Growth characteristics and film properties

Han Bo Ram Lee; Inchan Hwang; Jae Min Kim; Hyungjun Kim

doi:10.1149/2.031202jes

Supercritical fluid deposition of SiO ₂ thin films: Growth characteristics and film properties

Han Bo Ram Lee, Inchan Hwang, Jae Min Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Supercritical fluid deposition (SCFD) of SiO ₂ thin film using supercritical fluid CO ₂ (SCF CO ₂) was investigated. Tetraethyl orthosilicate (TEOS) and O ₂ were used as precursor and reactant, respectively. Growth characteristics of SCFD SiO ₂ were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO ₂ was lower than the reported value of chemical vapor deposition of SiO ₂, indicating the solvation effects of SCF CO ₂ on the reaction of TEOS and O ₂. By controlling precursor concentrations, excellent gap filling of SCFD SiO ₂ was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO ₂ films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O ₂ concentration led to rapid reaction of SCFD SiO ₂, resulting in the low density SiO ₂ formation with high leakage current.

Original language	English
Pages (from-to)	D46-D49
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	2
DOIs	https://doi.org/10.1149/2.031202jes
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/2.031202jes

Cite this

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title = "Supercritical fluid deposition of SiO 2 thin films: Growth characteristics and film properties",

abstract = "Supercritical fluid deposition (SCFD) of SiO 2 thin film using supercritical fluid CO 2 (SCF CO 2) was investigated. Tetraethyl orthosilicate (TEOS) and O 2 were used as precursor and reactant, respectively. Growth characteristics of SCFD SiO 2 were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO 2 was lower than the reported value of chemical vapor deposition of SiO 2, indicating the solvation effects of SCF CO 2 on the reaction of TEOS and O 2. By controlling precursor concentrations, excellent gap filling of SCFD SiO 2 was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO 2 films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O 2 concentration led to rapid reaction of SCFD SiO 2, resulting in the low density SiO 2 formation with high leakage current.",

author = "Lee, {Han Bo Ram} and Inchan Hwang and Kim, {Jae Min} and Hyungjun Kim",

year = "2012",

doi = "10.1149/2.031202jes",

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T1 - Supercritical fluid deposition of SiO 2 thin films

T2 - Growth characteristics and film properties

AU - Lee, Han Bo Ram

AU - Hwang, Inchan

AU - Kim, Jae Min

AU - Kim, Hyungjun

PY - 2012

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N2 - Supercritical fluid deposition (SCFD) of SiO 2 thin film using supercritical fluid CO 2 (SCF CO 2) was investigated. Tetraethyl orthosilicate (TEOS) and O 2 were used as precursor and reactant, respectively. Growth characteristics of SCFD SiO 2 were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO 2 was lower than the reported value of chemical vapor deposition of SiO 2, indicating the solvation effects of SCF CO 2 on the reaction of TEOS and O 2. By controlling precursor concentrations, excellent gap filling of SCFD SiO 2 was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO 2 films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O 2 concentration led to rapid reaction of SCFD SiO 2, resulting in the low density SiO 2 formation with high leakage current.

AB - Supercritical fluid deposition (SCFD) of SiO 2 thin film using supercritical fluid CO 2 (SCF CO 2) was investigated. Tetraethyl orthosilicate (TEOS) and O 2 were used as precursor and reactant, respectively. Growth characteristics of SCFD SiO 2 were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO 2 was lower than the reported value of chemical vapor deposition of SiO 2, indicating the solvation effects of SCF CO 2 on the reaction of TEOS and O 2. By controlling precursor concentrations, excellent gap filling of SCFD SiO 2 was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO 2 films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O 2 concentration led to rapid reaction of SCFD SiO 2, resulting in the low density SiO 2 formation with high leakage current.

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