Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: Chamber design optimization with computational fluid dynamics

Owing to the increase in demand for the shrinkage of semiconductor design rules and the advent of the three-dimensional structure of semiconductor devices, atomic layer deposition (ALD) has emerged as an attractive alternative to conventional chemical vapor deposition techniques. Although the development of precursors and characterization of ALD films have been widely studied, few studies have been conducted on the modification of ALD parameters and optimization of the ALD process. In this study, an advanced ALD titanium nitride (TiN) system was designed using a pumping and purging simulation Based on the simulation results, we adopted a carrier pulse purge method, where TiCl₄ fed, purge N₂, pulse purge N₂, purge N₂, NH₃ fed, purge N₂, pulse purge N₂, and purge N₂ were alternatively injected into the chamber in the ALD cycle. Compared to the conventional purge method, the carrier pulse purge method can reduce the ALD cycle time by 18.27% and yields a high-quality (high step coverage, 98 %) TiN film with lower electrical resistivity and chlorine impurity. This carrier pulse purge method can ultimately lead to improved throughput and productivity in the semiconductor industry by reducing the ALD cycle time.