Suggestion of new methodology for evaluation of osseointegration between implant and bone based on μ-CT images

Chang Yong Ko, Dohyung Lim, Byung Ho Choi, Jingxu Li, Han Sung Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Osseointegration has been used as an index for prediction of long-term success of implant. Osseointegration has been routinely evaluated by measuring bone contact ratio on histology based on two-dimensional (2D) sections or images. However, these both methodologies have been less informative analysis of results and have several disadvantages. The aim of this study is to introduce new methodology for evaluation of a degree of osseointegration between bone and implant based on micro computed tomography (μ-CT) images. Specimen was scanned at a voxel resolution of 35 & μm by μ-CT. Three-dimensional (3D) models of bone and implant were reconstructed respectively. Bone contact area (BCA) and bone contact area ratio (BCAR) were measured and calculated. Here, osseointegrated BCA between bone and implant surfaces was determined by computing areas of all bone regions existed within 35& μm distance from implant surface. Osseointegration of flapless implant surgery was evaluated by new methodology, compared with that of flap implant surgery. BCA and BCAR in flapless implant surgery was significantly bigger than that in flap implant surgery (p<0.05), suggesting that flapless implant surgery was more effective than flap implant surgery consistent with previous studies. In the conclusion, new methodology for evaluation osseointegration between bone and implant based on μ-CT images was likely to be reliable, useful and more informative analysis of results.

Original languageEnglish
Pages (from-to)785-790
Number of pages6
JournalInternational Journal of Precision Engineering and Manufacturing
Issue number5
Publication statusPublished - 2010 Oct

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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