Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Soon Mok Ha; Woo Sik Kim; Hyung Ho Park; Tae Song Kim

doi:10.1080/00150190108008749

Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Soon Mok Ha, Woo Sik Kim, Hyung Ho Park, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO₂/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

Original language	English
Pages (from-to)	283-288
Number of pages	6
Journal	Ferroelectrics
Volume	259
Issue number	1
DOIs	https://doi.org/10.1080/00150190108008749
Publication status	Published - 2001
Event	3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 2002 Dec 12 → 2002 Dec 15

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190108008749

Cite this

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title = "Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal",

abstract = "PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.",

author = "Ha, {Soon Mok} and Kim, {Woo Sik} and Park, {Hyung Ho} and Kim, {Tae Song}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant; 3rd Asian Meeting on Ferroelectrics, AMF-3 ; Conference date: 12-12-2002 Through 15-12-2002",

year = "2001",

doi = "10.1080/00150190108008749",

language = "English",

volume = "259",

pages = "283--288",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

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TY - JOUR

T1 - Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

AU - Ha, Soon Mok

AU - Kim, Woo Sik

AU - Park, Hyung Ho

AU - Kim, Tae Song

N1 - Funding Information: This work was supported by Korea Research Foundation Grant

PY - 2001

Y1 - 2001

N2 - PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

AB - PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

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DO - 10.1080/00150190108008749

M3 - Conference article

AN - SCOPUS:78649435876

SN - 0015-0193

VL - 259

SP - 283

EP - 288

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 3rd Asian Meeting on Ferroelectrics, AMF-3

Y2 - 12 December 2002 through 15 December 2002

ER -

Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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