Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study

Amithraj Valsaraj; Leonard F. Register; Sanjay K. Banerjee; Jiwon Chang

doi:10.1109/SISPAD.2015.7292301

Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study

Amithraj Valsaraj, Leonard F. Register, Sanjay K. Banerjee, Jiwon Chang

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Significant roadblocks to the widespread use of monolayer transition metal dichaclogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS₂ using density functional theory.

Original language	English
Title of host publication	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	230-233
Number of pages	4
ISBN (Electronic)	9781467378581
DOIs	https://doi.org/10.1109/SISPAD.2015.7292301
Publication status	Published - 2015 Oct 5
Event	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States Duration: 2015 Sept 9 → 2015 Sept 11

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2015-October

Conference

Conference	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Country/Territory	United States
City	Washington
Period	15/9/9 → 15/9/11

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2015.7292301

Cite this

Valsaraj, A., Register, L. F., Banerjee, S. K., & Chang, J. (2015). Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (pp. 230-233). [7292301] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2015.7292301

Valsaraj, Amithraj ; Register, Leonard F. ; Banerjee, Sanjay K. et al. / Substitutional doping of metal contact for monolayer transition metal dichalcogenides : A density functional theory based study. 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 230-233 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{a1ae520d4cdf4442be5d0d866cc4210f,

title = "Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study",

abstract = "Significant roadblocks to the widespread use of monolayer transition metal dichaclogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS2 using density functional theory.",

author = "Amithraj Valsaraj and Register, {Leonard F.} and Banerjee, {Sanjay K.} and Jiwon Chang",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",

year = "2015",

month = oct,

day = "5",

doi = "10.1109/SISPAD.2015.7292301",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "230--233",

booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",

address = "United States",

}

Valsaraj, A, Register, LF, Banerjee, SK & Chang, J 2015, Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study. in 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015., 7292301, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., pp. 230-233, 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, Washington, United States, 15/9/9. https://doi.org/10.1109/SISPAD.2015.7292301

Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study. / Valsaraj, Amithraj; Register, Leonard F.; Banerjee, Sanjay K. et al.
2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 230-233 7292301 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Substitutional doping of metal contact for monolayer transition metal dichalcogenides

T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

AU - Valsaraj, Amithraj

AU - Register, Leonard F.

AU - Banerjee, Sanjay K.

AU - Chang, Jiwon

PY - 2015/10/5

Y1 - 2015/10/5

N2 - Significant roadblocks to the widespread use of monolayer transition metal dichaclogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS2 using density functional theory.

AB - Significant roadblocks to the widespread use of monolayer transition metal dichaclogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS2 using density functional theory.

UR - http://www.scopus.com/inward/record.url?scp=84983184296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983184296&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2015.7292301

DO - 10.1109/SISPAD.2015.7292301

M3 - Conference contribution

AN - SCOPUS:84983184296

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 230

EP - 233

BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 9 September 2015 through 11 September 2015

ER -

Valsaraj A, Register LF, Banerjee SK, Chang J. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 230-233. 7292301. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2015.7292301

Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study

Abstract

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