Substantial enhancement in the performance of a spin valve through the ultra-thin insertion of partially oxidized Fe

Jangsik In, Yoonsung Han, Jaechul Shim, Sunghoon Kim, Jongill Hong

Research output: Contribution to journalArticlepeer-review

Abstract

We found that the ultra-thin insertion of a mix of Fe and Fe oxide in the pinned layer substantially enhanced the performance of a spin valve. With the exchange bias field kept large, the giant magnetoresistance (GMR) reached 11.3%, which corresponded to a 46% increase in GMR compared with the GMR of spin valves without the insertion. We attribute this considerable enhancement to spin-dependent scattering boosted by the combined effect of the modified local electronic structures at the Fe and specular reflections at the α-Fe 2O3 of the insertion.

Original languageEnglish
Article number004
Pages (from-to)3038-3042
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume40
Issue number10
DOIs
Publication statusPublished - 2007 May 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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