Abstract
We found that the ultra-thin insertion of a mix of Fe and Fe oxide in the pinned layer substantially enhanced the performance of a spin valve. With the exchange bias field kept large, the giant magnetoresistance (GMR) reached 11.3%, which corresponded to a 46% increase in GMR compared with the GMR of spin valves without the insertion. We attribute this considerable enhancement to spin-dependent scattering boosted by the combined effect of the modified local electronic structures at the Fe and specular reflections at the α-Fe 2O3 of the insertion.
Original language | English |
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Article number | 004 |
Pages (from-to) | 3038-3042 |
Number of pages | 5 |
Journal | Journal of Physics D: Applied Physics |
Volume | 40 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2007 May 21 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films