Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

  • C. S. Shin
  • , W. K. Park
  • , Sh Shin
  • , Yd Cho
  • , Dh Ko
  • , T. W. Kim
  • , D. H. Koh
  • , Hm Kwon
  • , R. J.W. Hill
  • , P. Kirsch
  • , W. Maszara
  • , D. H. Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

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