This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
|Title of host publication||Digest of Technical Papers - Symposium on VLSI Technology|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2014 Sept 8|
|Event||34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States|
Duration: 2014 Jun 9 → 2014 Jun 12
|Name||Digest of Technical Papers - Symposium on VLSI Technology|
|Other||34th Symposium on VLSI Technology, VLSIT 2014|
|Period||14/6/9 → 14/6/12|
Bibliographical notePublisher Copyright:
© 2014 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering