Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

T. W. Kim; D. H. Kim; D. H. Koh; H. M. Kwon; R. H. Baek; D. Veksler; C. Huffman; K. Matthews; S. Oktyabrsky; A. Greene; Y. Ohsawa; A. Ko; H. Nakajima; M. Takahashi; T. Nishizuka; H. Ohtake; S. K. Banerjee; S. H. Shin; D. H. Ko; C. Kang; D. Gilmer; R. J.W. Hill; W. Maszara; C. Hobbs; P. D. Kirsch

doi:10.1109/IEDM.2013.6724641

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al ₂O₃/HfO₂ (EOT < 1 nm) for low-power logic applications

T. W. Kim, D. H. Kim, D. H. Koh, H. M. Kwon, R. H. Baek, D. Veksler, C. Huffman, K. Matthews, S. Oktyabrsky, A. Greene, Y. Ohsawa, A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka, H. Ohtake, S. K. Banerjee, S. H. Shin, D. H. Ko, C. KangD. Gilmer, R. J.W. Hill, W. Maszara, C. Hobbs, P. D. Kirsch

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

28 Citations (Scopus)

Abstract

This paper reports tri-gate sub-100 nm In_0.53Ga_0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of g_{m, max} > 1.5 mS/μm, at V_DS = 0.5 V. This result is the best balance of g _{m, max} and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ₀ = 760 cm²/V-s and peak v_x0 = 1.6×10⁷ cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	16.3.1-16.3.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724641
Publication status	Published - 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 2013 Dec 9 → 2013 Dec 11

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	13/12/9 → 13/12/11

Bibliographical note

Funding Information:
The work reported in this paper has been supported by the PROMISE network of excellence (contract n. 258191) project and by the QONTEXT project (grant agreement n. 247590), as a part of the 7th Framework Program of the European commission.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2013.6724641

Cite this

Kim, T. W., Kim, D. H., Koh, D. H., Kwon, H. M., Baek, R. H., Veksler, D., Huffman, C., Matthews, K., Oktyabrsky, S., Greene, A., Ohsawa, Y., Ko, A., Nakajima, H., Takahashi, M., Nishizuka, T., Ohtake, H., Banerjee, S. K., Shin, S. H., Ko, D. H., ... Kirsch, P. D. (2013). Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al ₂O₃/HfO₂ (EOT < 1 nm) for low-power logic applications. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 16.3.1-16.3.4). Article 6724641 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724641

@inproceedings{0fadb678468c47e2a6fff313f54426e4,

title = "Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications",

abstract = "This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.",

author = "Kim, {T. W.} and Kim, {D. H.} and Koh, {D. H.} and Kwon, {H. M.} and Baek, {R. H.} and D. Veksler and C. Huffman and K. Matthews and S. Oktyabrsky and A. Greene and Y. Ohsawa and A. Ko and H. Nakajima and M. Takahashi and T. Nishizuka and H. Ohtake and Banerjee, {S. K.} and Shin, {S. H.} and Ko, {D. H.} and C. Kang and D. Gilmer and Hill, {R. J.W.} and W. Maszara and C. Hobbs and Kirsch, {P. D.}",

note = "Funding Information: The work reported in this paper has been supported by the PROMISE network of excellence (contract n. 258191) project and by the QONTEXT project (grant agreement n. 247590), as a part of the 7th Framework Program of the European commission.; 2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

year = "2013",

doi = "10.1109/IEDM.2013.6724641",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "16.3.1--16.3.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

}

Kim, TW, Kim, DH, Koh, DH, Kwon, HM, Baek, RH, Veksler, D, Huffman, C, Matthews, K, Oktyabrsky, S, Greene, A, Ohsawa, Y, Ko, A, Nakajima, H, Takahashi, M, Nishizuka, T, Ohtake, H, Banerjee, SK, Shin, SH, Ko, DH, Kang, C, Gilmer, D, Hill, RJW, Maszara, W, Hobbs, C & Kirsch, PD 2013, Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al ₂O₃/HfO₂ (EOT < 1 nm) for low-power logic applications. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724641, Technical Digest - International Electron Devices Meeting, IEDM, pp. 16.3.1-16.3.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 13/12/9. https://doi.org/10.1109/IEDM.2013.6724641

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al ₂O₃/HfO₂ (EOT < 1 nm) for low-power logic applications. / Kim, T. W.; Kim, D. H.; Koh, D. H. et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 16.3.1-16.3.4 6724641 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

AU - Kim, T. W.

AU - Kim, D. H.

AU - Koh, D. H.

AU - Kwon, H. M.

AU - Baek, R. H.

AU - Veksler, D.

AU - Huffman, C.

AU - Matthews, K.

AU - Oktyabrsky, S.

AU - Greene, A.

AU - Ohsawa, Y.

AU - Ko, A.

AU - Nakajima, H.

AU - Takahashi, M.

AU - Nishizuka, T.

AU - Ohtake, H.

AU - Banerjee, S. K.

AU - Shin, S. H.

AU - Ko, D. H.

AU - Kang, C.

AU - Gilmer, D.

AU - Hill, R. J.W.

AU - Maszara, W.

AU - Hobbs, C.

AU - Kirsch, P. D.

N1 - Funding Information: The work reported in this paper has been supported by the PROMISE network of excellence (contract n. 258191) project and by the QONTEXT project (grant agreement n. 247590), as a part of the 7th Framework Program of the European commission.

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N2 - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

AB - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

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M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

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Kim TW, Kim DH, Koh DH, Kwon HM, Baek RH, Veksler D et al. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al ₂O₃/HfO₂ (EOT < 1 nm) for low-power logic applications. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 16.3.1-16.3.4. 6724641. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2013.6724641