This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.
|Title of host publication||2013 IEEE International Electron Devices Meeting, IEDM 2013|
|Publication status||Published - 2013|
|Event||2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States|
Duration: 2013 Dec 9 → 2013 Dec 11
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Other||2013 IEEE International Electron Devices Meeting, IEDM 2013|
|Period||13/12/9 → 13/12/11|
Bibliographical noteFunding Information:
The work reported in this paper has been supported by the PROMISE network of excellence (contract n. 258191) project and by the QONTEXT project (grant agreement n. 247590), as a part of the 7th Framework Program of the European commission.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering