Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography

Jeong Gon Son; Myungwoo Son; Kyeong Joo Moon; Byoung Hun Lee; Jae Min Myoung; Michael S. Strano; Moon Ho Ham; Caroline A. Ross

doi:10.1002/adma.201300813

Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography

Jeong Gon Son, Myungwoo Son, Kyeong Joo Moon, Byoung Hun Lee, Jae Min Myoung, Michael S. Strano, Moon Ho Ham, Caroline A. Ross

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.

Original language	English
Pages (from-to)	4723-4728
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	34
DOIs	https://doi.org/10.1002/adma.201300813
Publication status	Published - 2013 Sept 14

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201300813

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title = "Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography",

abstract = "Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.",

author = "Son, {Jeong Gon} and Myungwoo Son and Moon, {Kyeong Joo} and Lee, {Byoung Hun} and Myoung, {Jae Min} and Strano, {Michael S.} and Ham, {Moon Ho} and Ross, {Caroline A.}",

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AU - Son, Jeong Gon

AU - Son, Myungwoo

AU - Moon, Kyeong Joo

AU - Lee, Byoung Hun

AU - Myoung, Jae Min

AU - Strano, Michael S.

AU - Ham, Moon Ho

AU - Ross, Caroline A.

PY - 2013/9/14

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AB - Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.

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Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography

Abstract

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