@inproceedings{88d75cfd1df34b4882bd881d039a420e,
title = "Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx",
abstract = "We investigated the silicide formation in the Ni/epi-Si1-xC x systems. Ni films were deposited on epi-Si1-xC x/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni/epi-Si 1-xCx systems was maintained at low values compared to Ni/Si systems. The stability of the silicide layer in Ni/epi-Si 1-xCx system is explained by the presence of the small amount of C in the Ni-silicide layer or at the grain boundaries.",
author = "Yoo, {Jung Ho} and Chang, {Hyun Jin} and Cho, {Mann Ho} and Lee, {Tae Wan} and Ko, {Dae Hong}",
year = "2008",
doi = "10.1149/1.2911526",
language = "English",
isbn = "9781566776264",
series = "ECS Transactions",
number = "1",
pages = "427--432",
booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",
edition = "1",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 ; Conference date: 18-05-2008 Through 22-05-2008",
}