Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

Min Hwan Lee, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)

Abstract

The electrical conduction mechanism within a resistive switching TiO 2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.

Original languageEnglish
Article number152909
JournalApplied Physics Letters
Volume96
Issue number15
DOIs
Publication statusPublished - 2010 Apr 12

Bibliographical note

Funding Information:
The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development and 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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