Abstract
In this paper, the crystallization behavior of nitrogen-doped SbSe films was investigated as a function of nitrogen content. We found that the SET resistance and crystallization temperature of nitrogen-doped SbSe films were higher than those of un-doped SbSe films. Moreover, the crystallinity and average grain area decreased with increasing nitrogen content because of the formation of nitrides, which disturbed crystal growth. Theoretical modeling was conducted to verify the effects of nitrogen doping, and the results were in good agreement with the experimental results. Through the optical band gap measurement, we found that nitrogen doping is an effective method for improving amorphous stability and reducing RESET current. In addition, the newly formed nitrides improved the chemical composition stability by suppressing element loss. After optimizing the nitrogen contents, nitrogen-doped SbSe films are expected to be promising materials for PCRAM applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1526-1534 |
| Number of pages | 9 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 213 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2016 Jun 1 |
Bibliographical note
Publisher Copyright:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry