Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

Chang Su Kim; Sung Jin Jo; Soon Moon Jeong; Woo Jin Kim; Hong Koo Baik; Se Jong Lee; Kie Moon Song

doi:10.1088/0953-2048/18/3/021

Study of the growth of biaxially textured CeO₂ films during ion-beam-assisted deposition

Chang Su Kim, Sung Jin Jo, Soon Moon Jeong, Woo Jin Kim, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Biaxially textured CeO₂ films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO₂ films have been successfully grown on Hastelloy C276.

Original language	English
Pages (from-to)	330-333
Number of pages	4
Journal	Superconductor Science and Technology
Volume	18
Issue number	3
DOIs	https://doi.org/10.1088/0953-2048/18/3/021
Publication status	Published - 2005 Mar

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/18/3/021

Cite this

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title = "Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition",

abstract = "Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.",

author = "Kim, {Chang Su} and Jo, {Sung Jin} and Jeong, {Soon Moon} and Kim, {Woo Jin} and Baik, {Hong Koo} and Lee, {Se Jong} and Song, {Kie Moon}",

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T1 - Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Jeong, Soon Moon

AU - Kim, Woo Jin

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

PY - 2005/3

Y1 - 2005/3

N2 - Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

AB - Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

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Study of the growth of biaxially textured CeO₂ films during ion-beam-assisted deposition

Abstract

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