Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells

S. Cheon; S. C. Lee; S. Hong; K. H. Yoo

doi:10.1016/0038-1101(95)00110-F

Study of quasi-two dimensional hole gas in Si/Si_xGe_1-x/Si quantum wells

S. Cheon, S. C. Lee, S. Hong, K. H. Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Quasi-two-dimensional hole gas in a strained Si/Si_xGe_1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si_0.8Ge_0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm²/V with a sheet carrier concentration of ∼ 1.1 × 10¹² and the effective mass of ∼0.3 m₀ are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

Original language	English
Pages (from-to)	7-13
Number of pages	7
Journal	Solid-State Electronics
Volume	39
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(95)00110-F
Publication status	Published - 1996

Bibliographical note

Funding Information:
Acknowledgement--This work is partially supported by KOSEF.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/0038-1101(95)00110-F

Cite this

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title = "Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells",

abstract = "Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schr{\"o}dinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.",

author = "S. Cheon and Lee, {S. C.} and S. Hong and Yoo, {K. H.}",

note = "Funding Information: Acknowledgement--This work is partially supported by KOSEF.",

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AU - Cheon, S.

AU - Lee, S. C.

AU - Hong, S.

AU - Yoo, K. H.

N1 - Funding Information: Acknowledgement--This work is partially supported by KOSEF.

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Y1 - 1996

N2 - Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

AB - Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

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