Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Seokhyun Yoon, Young Jun Tak, Doo Hyun Yoon, Uy Hyun Choi, Jin Seong Park, Byung Du Ahn, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	13496
Number of pages	13501
Journal	ACS applied materials & interfaces
Volume	6
Issue number	16
Publication status	Published - 2014 Aug

Cite this

@article{1b7da77e2f624874af25ff37716edfcd,

title = "Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors",

author = "Seokhyun Yoon and Tak, {Young Jun} and Yoon, {Doo Hyun} and Choi, {Uy Hyun} and Park, {Jin Seong} and Ahn, {Byung Du} and Kim, {Heon Je}",

year = "2014",

month = aug,

language = "English",

volume = "6",

pages = "13496",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "16",

}

TY - JOUR

T1 - Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

AU - Yoon, Seokhyun

AU - Tak, Young Jun

AU - Yoon, Doo Hyun

AU - Choi, Uy Hyun

AU - Park, Jin Seong

AU - Ahn, Byung Du

AU - Kim, Heon Je

PY - 2014/8

Y1 - 2014/8

M3 - Article

SN - 1944-8244

VL - 6

SP - 13496

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 16

ER -