Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT

Ji Sim Jung; Jang Yeon Kwon; Wenxu Xianyu; Takashi Noguchi; Seong Hoon Jeong; Seok Won Jeong; Yonghan Roh; Takashi Noguchi

Study of HfO ₂ high-k gate oxide for low-temperature poly-Si TFT

Ji Sim Jung, Jang Yeon Kwon, Wenxu Xianyu, Takashi Noguchi, Seong Hoon Jeong, Seok Won Jeong, Yonghan Roh, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated HfO ₂/SiO ₂ thin film and found that it is a suitable candidate for an alternate gate insulator of SiO ₂ in thin film transistors (TFTs). Ultra thin SiO ₂ of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O ₂ and N ₂ ambient, respectively, to form polycrystalline HfO ₂ thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 ^-7 A/cm ² at -10 V and low EOT by HfO ₂/SiO ₂ double-layer structure.

Original language	English
Pages (from-to)	S32-S34
Journal	Journal of the Korean Physical Society
Volume	48
Issue number	SUPPL. 1
Publication status	Published - 2006 Jan

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT",

abstract = "We investigated HfO 2/SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2/SiO 2 double-layer structure.",

author = "Jung, {Ji Sim} and Kwon, {Jang Yeon} and Wenxu Xianyu and Takashi Noguchi and Jeong, {Seong Hoon} and Jeong, {Seok Won} and Yonghan Roh and Takashi Noguchi",

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volume = "48",

pages = "S32--S34",

journal = "Journal of the Korean Physical Society",

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T1 - Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Xianyu, Wenxu

AU - Noguchi, Takashi

AU - Jeong, Seong Hoon

AU - Jeong, Seok Won

AU - Roh, Yonghan

AU - Noguchi, Takashi

PY - 2006/1

Y1 - 2006/1

N2 - We investigated HfO 2/SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2/SiO 2 double-layer structure.

AB - We investigated HfO 2/SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2/SiO 2 double-layer structure.

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ER -

Study of HfO ₂ high-k gate oxide for low-temperature poly-Si TFT

Abstract

All Science Journal Classification (ASJC) codes

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