The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.
|Number of pages||6|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2009 Feb|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)