Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh, Dae Hong Ko, Mann Ho Cho, Kwun Bum Chung

Research output: Contribution to journalArticlepeer-review


The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

Original languageEnglish
Pages (from-to)637-642
Number of pages6
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2009 Feb

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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