Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh; Dae Hong Ko; Mann Ho Cho; Kwun Bum Chung

doi:10.3938/jkps.54.637

Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh, Dae Hong Ko, Mann Ho Cho, Kwun Bum Chung

Research output: Contribution to journal › Article › peer-review

Abstract

The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

Original language	English
Pages (from-to)	637-642
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	54
Issue number	2
DOIs	https://doi.org/10.3938/jkps.54.637
Publication status	Published - 2009 Feb

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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abstract = "The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.",

author = "Suh, {Dong Chan} and Ko, {Dae Hong} and Cho, {Mann Ho} and Chung, {Kwun Bum}",

year = "2009",

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AU - Cho, Mann Ho

AU - Chung, Kwun Bum

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N2 - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

AB - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

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Study of hafnium silicate treated with NO Gas annealing

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