Studies on the structure and bonding state of nitric amorphous carbon (a-CNx) films by reactive rf magnetron sputtering

Hae Suk Jung; Hyung Ho Park

doi:10.1016/S0040-6090(00)01363-8

Studies on the structure and bonding state of nitric amorphous carbon (a-CN_x) films by reactive rf magnetron sputtering

Hae Suk Jung, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This manuscript reports on the structure, bonding states of nitric amorphous carbon (a-CN_x) films and its correlation with electrical, optical properties with post-annealing treatment. a-CN_x films were deposited on Si(100) by reactive rf magnetron sputtering using a gas mixture of Ar and N₂. X-ray photoelectron spectroscopy revealed that there are two different C-N bonding states where N is bonded to both sp² and sp³ C atoms. The amount of N-sp³ C bond is proportional to the N/C atomic ratio in a-CN_x. As the amount of N-sp³ C bond decreased with annealing, total sp³/sp² bond ratio, resistivity, density and refractive index also decreased. Compared to amorphous carbon (a-C), a slow decrease tendency of total sp³/sp² bond ratio was observed in a-CN_x due to thermal resistance of the N-sp³ C bond.

Original language	English
Pages (from-to)	320-325
Number of pages	6
Journal	Thin Solid Films
Volume	377-378
DOIs	https://doi.org/10.1016/S0040-6090(00)01363-8
Publication status	Published - 2000 Dec 1

Bibliographical note

Funding Information:
This work was partially supported by the Yonsei University Research Fund of 1999 and the Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(00)01363-8

Cite this

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title = "Studies on the structure and bonding state of nitric amorphous carbon (a-CNx) films by reactive rf magnetron sputtering",

abstract = "This manuscript reports on the structure, bonding states of nitric amorphous carbon (a-CNx) films and its correlation with electrical, optical properties with post-annealing treatment. a-CNx films were deposited on Si(100) by reactive rf magnetron sputtering using a gas mixture of Ar and N2. X-ray photoelectron spectroscopy revealed that there are two different C-N bonding states where N is bonded to both sp2 and sp3 C atoms. The amount of N-sp3 C bond is proportional to the N/C atomic ratio in a-CNx. As the amount of N-sp3 C bond decreased with annealing, total sp3/sp2 bond ratio, resistivity, density and refractive index also decreased. Compared to amorphous carbon (a-C), a slow decrease tendency of total sp3/sp2 bond ratio was observed in a-CNx due to thermal resistance of the N-sp3 C bond.",

author = "Jung, {Hae Suk} and Park, {Hyung Ho}",

note = "Funding Information: This work was partially supported by the Yonsei University Research Fund of 1999 and the Brain Korea 21 project.",

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AU - Jung, Hae Suk

AU - Park, Hyung Ho

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PY - 2000/12/1

Y1 - 2000/12/1

N2 - This manuscript reports on the structure, bonding states of nitric amorphous carbon (a-CNx) films and its correlation with electrical, optical properties with post-annealing treatment. a-CNx films were deposited on Si(100) by reactive rf magnetron sputtering using a gas mixture of Ar and N2. X-ray photoelectron spectroscopy revealed that there are two different C-N bonding states where N is bonded to both sp2 and sp3 C atoms. The amount of N-sp3 C bond is proportional to the N/C atomic ratio in a-CNx. As the amount of N-sp3 C bond decreased with annealing, total sp3/sp2 bond ratio, resistivity, density and refractive index also decreased. Compared to amorphous carbon (a-C), a slow decrease tendency of total sp3/sp2 bond ratio was observed in a-CNx due to thermal resistance of the N-sp3 C bond.

AB - This manuscript reports on the structure, bonding states of nitric amorphous carbon (a-CNx) films and its correlation with electrical, optical properties with post-annealing treatment. a-CNx films were deposited on Si(100) by reactive rf magnetron sputtering using a gas mixture of Ar and N2. X-ray photoelectron spectroscopy revealed that there are two different C-N bonding states where N is bonded to both sp2 and sp3 C atoms. The amount of N-sp3 C bond is proportional to the N/C atomic ratio in a-CNx. As the amount of N-sp3 C bond decreased with annealing, total sp3/sp2 bond ratio, resistivity, density and refractive index also decreased. Compared to amorphous carbon (a-C), a slow decrease tendency of total sp3/sp2 bond ratio was observed in a-CNx due to thermal resistance of the N-sp3 C bond.

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