STT-MRAM Sensing: A Review

Taehui Na; Seung H. Kang; Seong Ook Jung

doi:10.1109/TCSII.2020.3040425

STT-MRAM Sensing: A Review

Taehui Na, Seung H. Kang, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Review article › peer-review

61 Citations (Scopus)

Abstract

This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.

Original language	English
Article number	9270597
Pages (from-to)	12-18
Number of pages	7
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	68
Issue number	1
DOIs	https://doi.org/10.1109/TCSII.2020.3040425
Publication status	Published - 2021 Jan

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/TCSII.2020.3040425

Cite this

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title = "STT-MRAM Sensing: A Review",

abstract = "This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.",

keywords = "Magnetic tunnel junction, offset tolerance, read disturbance, read yield, reference scheme, sense amplifier, sensing circuit, spin-transfer-torque MRAM, yield estimation",

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AU - Kang, Seung H.

AU - Jung, Seong Ook

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N2 - This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.

AB - This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance. Key breakthroughs for achieving the optimal reference scheme, read disturbance prevention, read energy reduction, accurate yield estimation, and overcoming other non-idealities are discussed. This review is intended to facilitate further enhancement of STT-MRAM sensing in advanced technology nodes, thereby fulfilling STT-MRAM's potential as a universal memory.

KW - Magnetic tunnel junction

KW - offset tolerance

KW - read disturbance

KW - read yield

KW - reference scheme

KW - sense amplifier

KW - sensing circuit

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STT-MRAM Sensing: A Review

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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