Structural properties of BaTiO₃ thin films on Si grown by metalorganic chemical vapor deposition

Ferroelectric BaTiO₃ thin films were grown on Si(100) substrates at a temperature of 600°C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO₃ preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO₃ epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.