Abstract
Cesiated CNx-layers on Si(100) were prepared by co-deposition of negative carbon ion beam and positive nitrogen ion beam at different energies(60-160 eV) respectively. The composition, structure, topographical AFM image and chemical bonds depend highly on deposition energies. XPS results show that that the bonded nitrogen contents and the higher [C-N]/([C-N]+[C = N]) ratio mainly depend on the nitrogen ion beam energy. Deposited carbon nitride thin films by this methods are superior bonding characteristics than any other deposition methods. Carbon nitride is a good candidate for the cold electron emission, because it is chemically and thermally stable than DLC films and have good field emission properties. Materials with low work function surfaces like as CsO-carbon nitride is a candidate for successful field emitters.
Original language | English |
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Pages | 551-555 |
Number of pages | 5 |
Publication status | Published - 1997 |
Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21 |
Other
Other | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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City | Kyongju, Korea |
Period | 97/8/17 → 97/8/21 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces