Structural, optical, and field emission properties of hydrogenated amorphous carbon films grown by helical resonator plasma enhanced chemical vapor deposition

Hydrogenated amorphous carbon films have been prepared by helical resonator plasma enhanced chemical vapor deposition using CH₄ and Hb₂ mixtures. Films with various physical properties were obtained from different deposition conditions. The structural and optical properties of hydrogenated amorphous carbon (a-C:H) films were more sensitive to the substrate bias than the substrate temperature. This reflects that the energetic ion bombardment modified the films more effectively than the thermal energy. The a-C:H films deposited with no bias applied show characteristics of polymeric films with a large content of C-H bond while the a-C:H films deposited as a function of the substrate temperature at a bias of 4O W show characteristics ranging from diamond-like carbon (DLC) to graphitic nature with a significantly reduced C-H bond. From elastic recoil detection analysis, the hydrogen content in the films also significantly reduced with an increase of substrate temperature at a bias of 4O W. The field emission from bare Si emitters and a-C:H coated Si emitters has been examined in an ultrahigh vacuum chamber. The field emission characteristic of the a-C:H coated Si emitters is better than that of the bare Si emitters. For the a-C:H coated Si emitters, the emission current of the a-C:H coated (at 150°C/40 W) Si emitters is higher than the that of the a-C:H coated (at 260°C/40 W) Si emitters. This difference in field emission characteristic is attributed to the structural and optical properties as well as hydrogen content.