Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Y. G. Kim; K. S. Baek; S. K. Chang

doi:10.1016/j.jcrysgro.2006.05.016

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Y. G. Kim, K. S. Baek, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Journal of Crystal Growth
Volume	293
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.05.016
Publication status	Published - 2006 Jul 15

Bibliographical note

Funding Information:
This work was supported by the Yonsei University Research Fund of 2005.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.05.016

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title = "Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows",

abstract = "It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.",

author = "Kim, {Y. G.} and Baek, {K. S.} and Chang, {S. K.}",

note = "Funding Information: This work was supported by the Yonsei University Research Fund of 2005.",

year = "2006",

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doi = "10.1016/j.jcrysgro.2006.05.016",

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T1 - Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

AU - Kim, Y. G.

AU - Baek, K. S.

AU - Chang, S. K.

N1 - Funding Information: This work was supported by the Yonsei University Research Fund of 2005.

PY - 2006/7/15

Y1 - 2006/7/15

N2 - It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.

AB - It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.

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DO - 10.1016/j.jcrysgro.2006.05.016

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SN - 0022-0248

VL - 293

SP - 32

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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