Structural evolution of Pd/GaN(0001) films during postannealing

Chong Cook Kim, Weon Hyo Kim, Jung Ho Je, Dae Woo Kim, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 °C. The origin of the Pd epitaxy on GAN(0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 °C.

Original languageEnglish
Pages (from-to)335-337
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2000 Jul

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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