Structural evolution of Pd/GaN(0001) films during postannealing

Chong Cook Kim; Weon Hyo Kim; Jung Ho Je; Dae Woo Kim; Hong Koo Baik; Sung Man Lee

doi:10.1149/1.1391141

Structural evolution of Pd/GaN(0001) films during postannealing

Chong Cook Kim, Weon Hyo Kim, Jung Ho Je, Dae Woo Kim, Hong Koo Baik, Sung Man Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 °C. The origin of the Pd epitaxy on GAN(0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga₂Pd₅ and Ga₅Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 °C.

Original language	English
Pages (from-to)	335-337
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	7
DOIs	https://doi.org/10.1149/1.1391141
Publication status	Published - 2000 Jul

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Structural evolution of Pd/GaN(0001) films during postannealing",

abstract = "We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 °C. The origin of the Pd epitaxy on GAN(0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 °C.",

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AU - Kim, Chong Cook

AU - Kim, Weon Hyo

AU - Je, Jung Ho

AU - Kim, Dae Woo

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 2000/7

Y1 - 2000/7

N2 - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 °C. The origin of the Pd epitaxy on GAN(0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 °C.

AB - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 °C. The origin of the Pd epitaxy on GAN(0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 °C.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Structural evolution of Pd/GaN(0001) films during postannealing

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