Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

Ki Hyun Yoon; Jeong Won Lee; Yong Soo Cho; Dong Heon Kang

doi:10.1063/1.116786

Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

Ki Hyun Yoon, Jeong Won Lee, Yong Soo Cho, Dong Heon Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

Original language	English
Pages (from-to)	572-574
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.116786
Publication status	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.116786

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title = "Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs",

abstract = "An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.",

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T1 - Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

AU - Yoon, Ki Hyun

AU - Lee, Jeong Won

AU - Cho, Yong Soo

AU - Kang, Dong Heon

PY - 1996

Y1 - 1996

N2 - An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

AB - An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

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Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

Abstract

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