Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures

Sunyeol Jeon, Seokhwan Bang, Seungjun Lee, Semyung Kwon, Wooho Jeong, Hyeongtag Jeon, Ho Jung Chang, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)


In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70 to 250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C, ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016 cm-3 with resistivities of 0.1-1 cm. ZnO thin films deposited at temperatures higher than 110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020 cm-3 than the films deposited at lower temperatures.

Original languageEnglish
Pages (from-to)H738-H743
JournalJournal of the Electrochemical Society
Issue number10
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures'. Together they form a unique fingerprint.

Cite this