TY - JOUR
T1 - Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors
AU - Park, Jee Ho
AU - Choi, Won Jin
AU - Chae, Soo Sang
AU - Oh, Jin Young
AU - Lee, Se Jong
AU - Song, Kie Moon
AU - Baik, Hong Koo
PY - 2011/8
Y1 - 2011/8
N2 - We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92%) in the visible region.
AB - We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92%) in the visible region.
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U2 - 10.1143/JJAP.50.080202
DO - 10.1143/JJAP.50.080202
M3 - Article
AN - SCOPUS:80051974169
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 8 PART 1
M1 - 080202
ER -