Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature

Sun Gyu Choi; A. Sivasankar Reddy; Tae Jung Ha; Byoung Gon Yu; Hyung Ho Park

doi:10.4191/KCERS.2007.44.1.645

Structural and electrical properties of La_0.7Sr _0.3MnO₃ film on SiO₂/Si substrate by RF magnetron sputtering at low temperature

Sun Gyu Choi, A. Sivasankar Reddy, Tae Jung Ha, Byoung Gon Yu, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The La_0.7Sr_0.3MnO₃ was deposited on SiO₂/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

Original language	English
Pages (from-to)	645-649
Number of pages	5
Journal	Journal of the Korean Ceramic Society
Volume	44
Issue number	11
DOIs	https://doi.org/10.4191/KCERS.2007.44.1.645
Publication status	Published - 2007 Nov 30

All Science Journal Classification (ASJC) codes

Ceramics and Composites

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10.4191/KCERS.2007.44.1.645

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title = "Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature",

abstract = "The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.",

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T1 - Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature

AU - Choi, Sun Gyu

AU - Reddy, A. Sivasankar

AU - Ha, Tae Jung

AU - Yu, Byoung Gon

AU - Park, Hyung Ho

PY - 2007/11/30

Y1 - 2007/11/30

N2 - The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

AB - The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

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Structural and electrical properties of La_0.7Sr _0.3MnO₃ film on SiO₂/Si substrate by RF magnetron sputtering at low temperature

Abstract

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