Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

M. H. Cho

doi:10.1116/1.1331296

Structural and electrical characteristics of Y₂O₃ films grown on oxidized Si(100) surface

M. H. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y₂O₃ film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

Original language	English
Pages (from-to)	192-199
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	1
DOIs	https://doi.org/10.1116/1.1331296
Publication status	Published - 2001 Jan

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1331296

Cite this

@article{4515fb3dc7e7423bb61bdbdc4efdf236,

title = "Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface",

abstract = "The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.",

author = "Cho, {M. H.}",

year = "2001",

month = jan,

doi = "10.1116/1.1331296",

language = "English",

volume = "19",

pages = "192--199",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

AU - Cho, M. H.

PY - 2001/1

Y1 - 2001/1

N2 - The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

AB - The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

UR - http://www.scopus.com/inward/record.url?scp=0035101132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035101132&partnerID=8YFLogxK

U2 - 10.1116/1.1331296

DO - 10.1116/1.1331296

M3 - Article

AN - SCOPUS:0035101132

SN - 0734-2101

VL - 19

SP - 192

EP - 199

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 1

ER -

Structural and electrical characteristics of Y₂O₃ films grown on oxidized Si(100) surface

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this