Strain evolution of Si1-xGex selective epitaxial growth in steps

S. Koo; S. W. Kim; D. H. Ko

doi:10.1149/05009.0551ecst

Strain evolution of Si_1-xGe_x selective epitaxial growth in steps

S. Koo, S. W. Kim, D. H. Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied Si_1-xGe_xepitaxial growth in steps. Epitaxial Si_1-xGe_xfilms were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	551-555
Number of pages	5
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0551ecst
Publication status	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/05009.0551ecst

Cite this

@inproceedings{e372a79a7bfd45b58048b3764b0ab7eb,

title = "Strain evolution of Si1-xGex selective epitaxial growth in steps",

abstract = "We studied Si1-xGexepitaxial growth in steps. Epitaxial Si1-xGexfilms were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.",

author = "S. Koo and Kim, {S. W.} and Ko, {D. H.}",

year = "2013",

doi = "10.1149/05009.0551ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "551--555",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Koo, S, Kim, SW & Ko, DH 2013, Strain evolution of Si_1-xGe_x selective epitaxial growth in steps. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 551-555, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.0551ecst

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AU - Koo, S.

AU - Kim, S. W.

AU - Ko, D. H.

PY - 2013

Y1 - 2013

N2 - We studied Si1-xGexepitaxial growth in steps. Epitaxial Si1-xGexfilms were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.

AB - We studied Si1-xGexepitaxial growth in steps. Epitaxial Si1-xGexfilms were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.

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DO - 10.1149/05009.0551ecst

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T3 - ECS Transactions

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EP - 555

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

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