Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell

Jin Young Chun; Hyun Kook Park; Byungkyu Song; Seong Ook Jung

doi:10.23919/ELINFOCOM.2018.8330599

Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell

Jin Young Chun, Hyun Kook Park, Byungkyu Song, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.

Original language	English
Title of host publication	International Conference on Electronics, Information and Communication, ICEIC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538647547
DOIs	https://doi.org/10.23919/ELINFOCOM.2018.8330599
Publication status	Published - 2018 Apr 2
Event	17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States Duration: 2018 Jan 24 → 2018 Jan 27

Publication series

Name	International Conference on Electronics, Information and Communication, ICEIC 2018
Volume	2018-January

Other

Other	17th International Conference on Electronics, Information and Communication, ICEIC 2018
Country/Territory	United States
City	Honolulu
Period	18/1/24 → 18/1/27

Bibliographical note

Publisher Copyright:
© 2018 Institute of Electronics and Information Engineers.

All Science Journal Classification (ASJC) codes

Information Systems
Computer Networks and Communications
Computer Science Applications
Signal Processing
Electrical and Electronic Engineering

Access to Document

10.23919/ELINFOCOM.2018.8330599

Cite this

Chun, J. Y., Park, H. K., Song, B., & Jung, S. O. (2018). Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. In International Conference on Electronics, Information and Communication, ICEIC 2018 (pp. 1-4). (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330599

Chun, Jin Young ; Park, Hyun Kook ; Song, Byungkyu et al. / Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018).

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title = "Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell",

abstract = "In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.",

keywords = "Cross-point, High speed sensing, Multi-level cell (MLC), Nonvolatile memory, Resistive RAM (ReRAM), Single-level cell (SLC)",

author = "Chun, {Jin Young} and Park, {Hyun Kook} and Byungkyu Song and Jung, {Seong Ook}",

note = "Publisher Copyright: {\textcopyright} 2018 Institute of Electronics and Information Engineers.; 17th International Conference on Electronics, Information and Communication, ICEIC 2018 ; Conference date: 24-01-2018 Through 27-01-2018",

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Chun, JY, Park, HK, Song, B & Jung, SO 2018, Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. in International Conference on Electronics, Information and Communication, ICEIC 2018. International Conference on Electronics, Information and Communication, ICEIC 2018, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 17th International Conference on Electronics, Information and Communication, ICEIC 2018, Honolulu, United States, 18/1/24. https://doi.org/10.23919/ELINFOCOM.2018.8330599

Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. / Chun, Jin Young; Park, Hyun Kook; Song, Byungkyu et al.
International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chun, Jin Young

AU - Park, Hyun Kook

AU - Song, Byungkyu

AU - Jung, Seong Ook

PY - 2018/4/2

Y1 - 2018/4/2

N2 - In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.

AB - In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.

KW - Cross-point

KW - High speed sensing

KW - Multi-level cell (MLC)

KW - Nonvolatile memory

KW - Resistive RAM (ReRAM)

KW - Single-level cell (SLC)

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Chun JY, Park HK, Song B, Jung SO. Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. In International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (International Conference on Electronics, Information and Communication, ICEIC 2018). doi: 10.23919/ELINFOCOM.2018.8330599

Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell

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