Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

Hanwool Jeong; Younghwi Yang; Junha Lee; Jisu Kim; Seong Ook Jung

doi:10.1109/ICECS.2012.6463530

Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

Hanwool Jeong, Younghwi Yang, Junha Lee, Jisu Kim, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.

Original language	English
Title of host publication	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Pages	833-836
Number of pages	4
DOIs	https://doi.org/10.1109/ICECS.2012.6463530
Publication status	Published - 2012
Event	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 - Seville, Seville, Spain Duration: 2012 Dec 9 → 2012 Dec 12

Publication series

Name	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

Other

Other	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Country/Territory	Spain
City	Seville, Seville
Period	12/12/9 → 12/12/12

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ICECS.2012.6463530

Cite this

Jeong, H., Yang, Y., Lee, J., Kim, J., & Jung, S. O. (2012). Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. In 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 833-836). Article 6463530 (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012). https://doi.org/10.1109/ICECS.2012.6463530

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title = "Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits",

abstract = "This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.",

author = "Hanwool Jeong and Younghwi Yang and Junha Lee and Jisu Kim and Jung, {Seong Ook}",

year = "2012",

doi = "10.1109/ICECS.2012.6463530",

language = "English",

isbn = "9781467312615",

series = "2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012",

pages = "833--836",

booktitle = "2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012",

note = "2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 ; Conference date: 09-12-2012 Through 12-12-2012",

}

Jeong, H, Yang, Y, Lee, J, Kim, J & Jung, SO 2012, Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. in 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012., 6463530, 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, pp. 833-836, 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, Seville, Seville, Spain, 12/12/9. https://doi.org/10.1109/ICECS.2012.6463530

Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. / Jeong, Hanwool; Yang, Younghwi; Lee, Junha et al.
2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. 2012. p. 833-836 6463530 (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.

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Jeong H, Yang Y, Lee J, Kim J, Jung SO. Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. In 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. 2012. p. 833-836. 6463530. (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012). doi: 10.1109/ICECS.2012.6463530

Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

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