Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Byeong Yun Oh, Min Chang Jeong, Jae Min Myoung

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95 Citations (Scopus)


Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.

Original languageEnglish
Pages (from-to)7157-7161
Number of pages5
JournalApplied Surface Science
Issue number17
Publication statusPublished - 2007 Jun 30

Bibliographical note

Funding Information:
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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