Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Byeong Yun Oh; Min Chang Jeong; Jae Min Myoung

doi:10.1016/j.apsusc.2007.02.181

Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Byeong Yun Oh, Min Chang Jeong, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.

Original language	English
Pages (from-to)	7157-7161
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	17
DOIs	https://doi.org/10.1016/j.apsusc.2007.02.181
Publication status	Published - 2007 Jun 30

Bibliographical note

Funding Information:
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2007.02.181

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title = "Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films",

abstract = "Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.",

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AU - Oh, Byeong Yun

AU - Jeong, Min Chang

AU - Myoung, Jae Min

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PY - 2007/6/30

Y1 - 2007/6/30

N2 - Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.

AB - Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.

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Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Abstract

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