@inproceedings{972ca6b15f3b4a21a53d3aa796dad5a1,
title = "Stability improvement of gallium indium zinc oxide thin film transistors by post-thermal annealing",
abstract = "The effects of post-thermal annealing on the stability of Ga 2O3-In2O3-ZnO (GIZO) thin film transistors (TFT) were investigated by comparing the GIZO TFTs annealed for 3 hour and for 65 hours under high-field bias stress, light illumination, and long-term storage in air. We found that the poor stability of the GIZO TFTs under these stresses was remarkably improved after 65 hours' post-thermal annealing at 250 °C. The improvement of the stability is ascribed to the reduction of the trap sites in the GIZO layer and curing of weak atomic bonds otherwise susceptible to breaking during the stress.",
author = "Jung, {Ji Sim} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Yoo, {Byung Wook} and Kwon, {Jang Yeon} and Le, {Sang Yoon} and Kim, {Jong Min}",
year = "2009",
doi = "10.1149/1.2980568",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "309--313",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}