Stability-improved organic n-channel thin-film transistors with nm-thin hydrophobic polymer-coated high-k dielectrics

Ji Hoon Park, Hee Sung Lee, Junyeong Lee, Kimoon Lee, Gyubaek Lee, Kwan Hyuck Yoon, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We report on the fabrication of N,N′-ditridecyl-perylene-3,4:9,10- tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al 2O 3 whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80°C, although the post-annealing was previously implemented at 120-140°C for PTCDI domain growth in general. The low temperature of 80°C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (∼110°C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80°C-annealed OTFTs with CYTOP-modified dielectrics.

Original languageEnglish
Pages (from-to)14202-14206
Number of pages5
JournalPhysical Chemistry Chemical Physics
Issue number41
Publication statusPublished - 2012 Nov 7

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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