SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse with Bitline Charge Sharing for Near-Threshold Operation

This brief presents SRAM write assist circuit using cell supply voltage self-collapse with bitline charge sharing (SC-BCS) that can lower the minimum operating voltage to the near-threshold voltage ( V th) region while consuming a minimal write energy. The proposed SC-BCS improves the write-ability by utilizing the cell supply voltage (CVDD) self-collapse and the feedback operation through the detection of write failure. Because the amount of CVDD collapse is regulated automatically depending on the write-ability of the selected cell, the write energy of the proposed SC-BCS is effectively reduced. The proposed SC-BCS can achieve a 5σ write-ability yield with a smaller delay overhead than gate-modulated self-collapse and self-collapse write assists in the near- V th region. In addition, the proposed SC-BCS consumes the lowest write energy with minimal delay overhead or without any delay overhead compared with the strong-bias transient CVDD collapse and pulsed-pMOS transient CVDD collapse. The measurement result of the test chip fabricated using 65-nm CMOS technology indicates that the proposed SC-BCS can operate without any failure up to 0.36 V consuming write power 12.6 μ W /MHz.