Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

Dong Ho Kim, Hey Ri Kim, Jung Dae Kwon, Gun Hwan Lee, Hee Sung Lee, Seongil Im

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.

Original languageEnglish
Pages (from-to)2934-2938
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number12
Publication statusPublished - 2011 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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