Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

Dong Ho Kim; Hey Ri Kim; Jung Dae Kwon; Gun Hwan Lee; Hee Sung Lee; Seongil Im

doi:10.1002/pssa.201127213

Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

Dong Ho Kim, Hey Ri Kim, Jung Dae Kwon, Gun Hwan Lee, Hee Sung Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO ₂ targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O ₂/(Ar + O ₂) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm ² V ^-1 s ^-1, on/off current ratio of 10 ⁹, and subthreshold voltage swing of 0.46 V decade ^-1.

Original language	English
Pages (from-to)	2934-2938
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	12
DOIs	https://doi.org/10.1002/pssa.201127213
Publication status	Published - 2011 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201127213

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@article{d3b8ca0b20f04deaa76d2e7149027cd6,

title = "Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors",

abstract = "Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.",

author = "Kim, {Dong Ho} and Kim, {Hey Ri} and Kwon, {Jung Dae} and Lee, {Gun Hwan} and Lee, {Hee Sung} and Seongil Im",

year = "2011",

month = dec,

doi = "10.1002/pssa.201127213",

language = "English",

volume = "208",

pages = "2934--2938",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

AU - Kim, Dong Ho

AU - Kim, Hey Ri

AU - Kwon, Jung Dae

AU - Lee, Gun Hwan

AU - Lee, Hee Sung

AU - Im, Seongil

PY - 2011/12

Y1 - 2011/12

N2 - Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.

AB - Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.

UR - http://www.scopus.com/inward/record.url?scp=82055162971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82055162971&partnerID=8YFLogxK

U2 - 10.1002/pssa.201127213

DO - 10.1002/pssa.201127213

M3 - Article

AN - SCOPUS:82055162971

SN - 1862-6300

VL - 208

SP - 2934

EP - 2938

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 12

ER -

Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

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