Spin diffusion in bulk GaN measured with MnAs spin injector

Shafat Jahangir, Fatih Doǧan, Hyun Kum, Aurelien Manchon, Pallab Bhattacharya

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23 Citations (Scopus)


Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D'yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

Original languageEnglish
Article number035315
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
Publication statusPublished - 2012 Jul 16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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