Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

Seok Ju Kang, Youn Jung Park, Jinwoo Sung, Pil Sung Jo, Cheolmin Park, Kap Jin Kim, Beong Ok Cho

Research output: Contribution to journalArticlepeer-review

145 Citations (Scopus)


We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.

Original languageEnglish
Article number012921
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by “SYSTEM2010” project and the 0.1 Terabit Non-volatile Memory Development funded by the Ministry of Commerce, Industry and Energy of the Korean Government, Seoul Research and Business Development Program (10701 and 10816), and the Second Stage of Brain Korea 21 Project in 2006 and by the Seoul Science Fellowship. The x-ray experiments at PAL (4C2 beamline), Korea were supported by MOST and POSCO, Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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