La0.7Sr0.3MnO3 thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O2 flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O2 ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La0.7Sr0.3MnO3 film was revealed to have reduced oxygen deficiencies with increasing O 2 flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.
|Journal||Journal of Physics D: Applied Physics|
|Publication status||Published - 2011 Oct 26|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films