Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

Sun Gyu Choi; Hong Sub Lee; Hyejung Choi; Sung Woong Chung; Hyung Ho Park

doi:10.1088/0022-3727/44/42/422001

Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

Sun Gyu Choi, Hong Sub Lee, Hyejung Choi, Sung Woong Chung, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

La_0.7Sr_0.3MnO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O₂ flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O₂ ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La_0.7Sr_0.3MnO₃ film was revealed to have reduced oxygen deficiencies with increasing O ₂ flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.

Original language	English
Article number	422001
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	42
DOIs	https://doi.org/10.1088/0022-3727/44/42/422001
Publication status	Published - 2011 Oct 26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/0022-3727/44/42/422001

Cite this

@article{3773f0cee62e4a0aad2149c338deeef8,

title = "Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state",

abstract = "La0.7Sr0.3MnO3 thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O2 flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O2 ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La0.7Sr0.3MnO3 film was revealed to have reduced oxygen deficiencies with increasing O 2 flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.",

author = "Choi, {Sun Gyu} and Lee, {Hong Sub} and Hyejung Choi and Chung, {Sung Woong} and Park, {Hyung Ho}",

year = "2011",

month = oct,

day = "26",

doi = "10.1088/0022-3727/44/42/422001",

language = "English",

volume = "44",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "42",

}

TY - JOUR

T1 - Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

AU - Choi, Sun Gyu

AU - Lee, Hong Sub

AU - Choi, Hyejung

AU - Chung, Sung Woong

AU - Park, Hyung Ho

PY - 2011/10/26

Y1 - 2011/10/26

N2 - La0.7Sr0.3MnO3 thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O2 flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O2 ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La0.7Sr0.3MnO3 film was revealed to have reduced oxygen deficiencies with increasing O 2 flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.

AB - La0.7Sr0.3MnO3 thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O2 flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O2 ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La0.7Sr0.3MnO3 film was revealed to have reduced oxygen deficiencies with increasing O 2 flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.

UR - http://www.scopus.com/inward/record.url?scp=80055097472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80055097472&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/44/42/422001

DO - 10.1088/0022-3727/44/42/422001

M3 - Article

AN - SCOPUS:80055097472

SN - 0022-3727

VL - 44

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 42

M1 - 422001

ER -

Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this