Spectral responsivity and quantum efficiency of n-Zno/p-Si photodiode fully isolated by ion-beam treatment

C. H. Park; I. S. Jeong; J. H. Kim; Seongil Im

doi:10.1063/1.1579553

Spectral responsivity and quantum efficiency of n-Zno/p-Si photodiode fully isolated by ion-beam treatment

C. H. Park, I. S. Jeong, J. H. Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Fabrication and spectral characteristics of n-ZnO/p-Si photodiodes that operated on the visible range and were fully isolated with the ion-beam induced technique were presented. It was shown that the isolated photodiodes demonstrated quantum efficiency of 70% maximum at 650 nm and 10% minimum at 420 nm. It was found that ion-beam-induced isolation was effective in reducing dark leakage currents, when the dose of Si⁺ ions reached 5×10⁵ cm^-2.

Original language	English
Pages (from-to)	3973-3975
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1579553
Publication status	Published - 2003 Jun 2

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1579553

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abstract = "Fabrication and spectral characteristics of n-ZnO/p-Si photodiodes that operated on the visible range and were fully isolated with the ion-beam induced technique were presented. It was shown that the isolated photodiodes demonstrated quantum efficiency of 70% maximum at 650 nm and 10% minimum at 420 nm. It was found that ion-beam-induced isolation was effective in reducing dark leakage currents, when the dose of Si+ ions reached 5×105 cm-2.",

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AU - Jeong, I. S.

AU - Kim, J. H.

AU - Im, Seongil

PY - 2003/6/2

Y1 - 2003/6/2

N2 - Fabrication and spectral characteristics of n-ZnO/p-Si photodiodes that operated on the visible range and were fully isolated with the ion-beam induced technique were presented. It was shown that the isolated photodiodes demonstrated quantum efficiency of 70% maximum at 650 nm and 10% minimum at 420 nm. It was found that ion-beam-induced isolation was effective in reducing dark leakage currents, when the dose of Si+ ions reached 5×105 cm-2.

AB - Fabrication and spectral characteristics of n-ZnO/p-Si photodiodes that operated on the visible range and were fully isolated with the ion-beam induced technique were presented. It was shown that the isolated photodiodes demonstrated quantum efficiency of 70% maximum at 650 nm and 10% minimum at 420 nm. It was found that ion-beam-induced isolation was effective in reducing dark leakage currents, when the dose of Si+ ions reached 5×105 cm-2.

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JF - Applied Physics Letters

IS - 22

ER -

Spectral responsivity and quantum efficiency of n-Zno/p-Si photodiode fully isolated by ion-beam treatment

Abstract

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