Abstract
We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO2 film on a silicon wafer.
Original language | English |
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Article number | 103109 |
Journal | Review of Scientific Instruments |
Volume | 81 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 Oct |
Bibliographical note
Funding Information:This work was supported in part by the Samsung Electronics and in part by the Ministry of Knowledge Economy of Korea (Project No. 10031812-2009-12).
All Science Journal Classification (ASJC) codes
- Instrumentation