Solution-processed thin film transistors with hafnium indium zinc oxide for AMOLED backplane

Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Hyun Jae Kim

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


In this study, the effects of hafnium in InZnO system were investigated. We also have fabricated hafnium-indium-zinc-oxide (HIZO) thin film transistors (TFTs) by solution process. The HIZO TFTs showed a field effect mobility of 2 cm2/Vs, an on/off current ratio of 4.95x106 and a sub-threshold swing of 0.54 V/decade. These results could enable the fabrication of high performance HIZO TFTs for AMOLED backplanes with solution process.

Original languageEnglish
Number of pages4
Publication statusPublished - 2009
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11


Other16th International Display Workshops, IDW '09

Bibliographical note

Funding Information:
This research is supported by the Korea Science and Engineering Foundation (KOSEF) under Grant No. 981-1003-021-2. The authors are grateful for this financial support.

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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