Abstract
In this study, the effects of hafnium in InZnO system were investigated. We also have fabricated hafnium-indium-zinc-oxide (HIZO) thin film transistors (TFTs) by solution process. The HIZO TFTs showed a field effect mobility of 2 cm2/Vs, an on/off current ratio of 4.95x106 and a sub-threshold swing of 0.54 V/decade. These results could enable the fabrication of high performance HIZO TFTs for AMOLED backplanes with solution process.
| Original language | English |
|---|---|
| Pages | 1795-1798 |
| Number of pages | 4 |
| Publication status | Published - 2009 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
| Other | 16th International Display Workshops, IDW '09 |
|---|---|
| Country/Territory | Japan |
| City | Miyazaki |
| Period | 09/12/9 → 09/12/11 |
Bibliographical note
Funding Information:This research is supported by the Korea Science and Engineering Foundation (KOSEF) under Grant No. 981-1003-021-2. The authors are grateful for this financial support.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials