Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

In this article, a solution process for oxide thin-film transistors (TFTs) at low-temperature annealing was investigated. Solution-process engineering, including materials and precursors, plays an important role in oxide thin-film deposition on large glass and flexible substrates at low temperature. Reactive material could reduce the alloy reaction temperature for a multicomponent oxide system. A volatile precursor could also reduce annealing temperature in the formation of metal-oxide thin films. A solution process with reactive Al and a volatile nitrate precursor can demonstrates competitive oxide TFTs at 350°C.