Solution-processed n-ZnO nanorod/p-Co                         3                         O                         4                          nanoplate heterojunction light-emitting diode

Jong Woo Kim; Su Jeong Lee; Pranab Biswas; Tae Il Lee; Jae Min Myoung

doi:10.1016/j.apsusc.2017.02.129

Solution-processed n-ZnO nanorod/p-Co ₃ O ₄ nanoplate heterojunction light-emitting diode

Jong Woo Kim, Su Jeong Lee, Pranab Biswas, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co ₃ O ₄ ) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co ₃ O ₄ NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn _i ) to oxygen interstitials (O _i ) or conduction-band minimum (CBM) to oxygen vacancies (V _O ), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn _i to zinc vacancies (V _Zn ).

Original language	English
Pages (from-to)	192-198
Number of pages	7
Journal	Applied Surface Science
Volume	406
DOIs	https://doi.org/10.1016/j.apsusc.2017.02.129
Publication status	Published - 2017 Jun 1

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program (Grant 10051207, Development of flexible inorganic light-emitting device fabrication technology based on metal oxide nanosemiconductor by solution process) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and the LG Display academic industrial cooperation program.

Publisher Copyright:
© 2017 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2017.02.129

Cite this

Kim, J. W., Lee, S. J., Biswas, P., Lee, T. I., & Myoung, J. M. (2017). Solution-processed n-ZnO nanorod/p-Co ₃ O ₄ nanoplate heterojunction light-emitting diode Applied Surface Science, 406, 192-198. https://doi.org/10.1016/j.apsusc.2017.02.129

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title = " Solution-processed n-ZnO nanorod/p-Co 3 O 4 nanoplate heterojunction light-emitting diode ",

abstract = " A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co 3 O 4 ) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co 3 O 4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn i ) to oxygen interstitials (O i ) or conduction-band minimum (CBM) to oxygen vacancies (V O ), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn i to zinc vacancies (V Zn ).",

author = "Kim, {Jong Woo} and Lee, {Su Jeong} and Pranab Biswas and Lee, {Tae Il} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the Technology Innovation Program (Grant 10051207, Development of flexible inorganic light-emitting device fabrication technology based on metal oxide nanosemiconductor by solution process) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and the LG Display academic industrial cooperation program. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

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doi = "10.1016/j.apsusc.2017.02.129",

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Kim, JW, Lee, SJ, Biswas, P, Lee, TI & Myoung, JM 2017, ' Solution-processed n-ZnO nanorod/p-Co ₃ O ₄ nanoplate heterojunction light-emitting diode ', Applied Surface Science, vol. 406, pp. 192-198. https://doi.org/10.1016/j.apsusc.2017.02.129

Solution-processed n-ZnO nanorod/p-Co ₃ O ₄ nanoplate heterojunction light-emitting diode . / Kim, Jong Woo; Lee, Su Jeong; Biswas, Pranab et al.
In: Applied Surface Science, Vol. 406, 01.06.2017, p. 192-198.

Research output: Contribution to journal › Article › peer-review

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T1 - Solution-processed n-ZnO nanorod/p-Co 3 O 4 nanoplate heterojunction light-emitting diode

AU - Kim, Jong Woo

AU - Lee, Su Jeong

AU - Biswas, Pranab

AU - Lee, Tae Il

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the Technology Innovation Program (Grant 10051207, Development of flexible inorganic light-emitting device fabrication technology based on metal oxide nanosemiconductor by solution process) funded by the Ministry of Trade, Industry & Energy (MI, Korea), and the LG Display academic industrial cooperation program. Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co 3 O 4 ) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co 3 O 4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn i ) to oxygen interstitials (O i ) or conduction-band minimum (CBM) to oxygen vacancies (V O ), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn i to zinc vacancies (V Zn ).

AB - A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co 3 O 4 ) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co 3 O 4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn i ) to oxygen interstitials (O i ) or conduction-band minimum (CBM) to oxygen vacancies (V O ), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn i to zinc vacancies (V Zn ).

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