Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

Sun Woong Han; Jee Ho Park; Young Bum Yoo; Keun Ho Lee; Kwang Hyun Kim; Hong Koo Baik

doi:10.1007/s10971-016-4205-y

Solution-processed laminated ZrO₂/Al₂O₃ dielectric for low-voltage indium zinc oxide thin-film transistors

Sun Woong Han, Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Kwang Hyun Kim, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO₂ (Z) and Al₂O₃ (A) dielectric effectively blocked the leakage current density (J_leak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower J_leak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al₂O₃ film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	570-575
Number of pages	6
Journal	Journal of Sol-Gel Science and Technology
Volume	81
Issue number	2
DOIs	https://doi.org/10.1007/s10971-016-4205-y
Publication status	Published - 2017 Feb 1

Bibliographical note

Publisher Copyright:
© 2016, Springer Science+Business Media New York.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Biomaterials
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1007/s10971-016-4205-y

Cite this

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title = "Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors",

abstract = "Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]",

author = "Han, {Sun Woong} and Park, {Jee Ho} and Yoo, {Young Bum} and Lee, {Keun Ho} and Kim, {Kwang Hyun} and Baik, {Hong Koo}",

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T1 - Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

AU - Han, Sun Woong

AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Lee, Keun Ho

AU - Kim, Kwang Hyun

AU - Baik, Hong Koo

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

AB - Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

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