Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

Sun Woong Han, Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Kwang Hyun Kim, Hong Koo Baik

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)570-575
Number of pages6
JournalJournal of Sol-Gel Science and Technology
Issue number2
Publication statusPublished - 2017 Feb 1

Bibliographical note

Publisher Copyright:
© 2016, Springer Science+Business Media New York.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry


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