Solution processed invisible all-oxide thin film transistors

Keunkyu Song, Dongjo Kim, Xiang Shu Li, Taewhan Jun, Youngmin Jeong, Jooho Moon

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)


We report on a fully transparent solution processed thin-film transistor (TFT) device with oxide semiconductor and oxide electrode. Selective doping into the sol-gel derived ZnO materials tailors the electrical properties to range from metallic to semiconducting characteristics. Integration of a spin-coated zinc tin oxide (ZTO) semiconductor with an ink-jet-printed zinc indium oxide (ZIO) electrode creates a transparent TFT with high performance and good transparency (∼90%). Use of the same ZnO-based oxide materials in a TFT allows for the formation of good electrical contacts characterized by low contact resistance, comparable to those with a vacuum-deposited Al electrode. Our results suggest that the solution-processed ZnO-based TFT has great potential to work as a building block for future printed transparent electronics.

Original languageEnglish
Pages (from-to)8881-8886
Number of pages6
JournalJournal of Materials Chemistry
Issue number46
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry


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